STATIC RANDOM ACCESS MEMORY WITH RIPPLE BIT LINES/SEARCH LINES FOR IMROVING CURRENT LEAKAGE/VARIATION TOLERANCE AND DENSITY/PERFORMANCE

• Main Authors: CHANG CHI-SHIN, LAI SHU-LIN, LU CHIEN-YU, YANG HAO-I, CHEN CHIEN-HEN, HWANG WEI, JOU SHYH-JYE, TU MING-HSIEN, HUANG PO-TSANG, CHUANG CHING-TE
• Format: Patent
• Language: English
• Published: 20.03.2014
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the fi...