STATIC RANDOM ACCESS MEMORY WITH RIPPLE BIT LINES/SEARCH LINES FOR IMROVING CURRENT LEAKAGE/VARIATION TOLERANCE AND DENSITY/PERFORMANCE

A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the fi...

Full description

Saved in:
Bibliographic Details
Main Authors CHANG CHI-SHIN, LAI SHU-LIN, LU CHIEN-YU, YANG HAO-I, CHEN CHIEN-HEN, HWANG WEI, JOU SHYH-JYE, TU MING-HSIEN, HUANG PO-TSANG, CHUANG CHING-TE
Format Patent
LanguageEnglish
Published 20.03.2014
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.
Bibliography:Application Number: US201213684784