LAYERED SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING IT

A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant a1 determined by a first dopant element and a first dopant concentration, and in direct contact therewith, a monocrystalline second layer based on silicon, havi...

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Main Authors THAPA SARAD BAHADUR, SCHWENK HELMUT, DREIER PETER, STORCK PETER, SACHS GUENTER, MUEMMLER FRANK, ROTHAMMER UTE, MAYRHUBER RUDOLF
Format Patent
LanguageEnglish
Published 20.02.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant a1 determined by a first dopant element and a first dopant concentration, and in direct contact therewith, a monocrystalline second layer based on silicon, having a second thickness and a second lattice constant a2, determined by a second dopant element and a second dopant concentration, and a monocrystalline third layer comprising a group III nitride, the second layer located between the first layer and the third layer, wherein a2>a1, wherein the crystal lattice of the first layer and the second layer are lattice-matched, and wherein the bow of the layered semiconductor substrate is in the range from -50 mum to 50 mum.
Bibliography:Application Number: US201214114056