SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTORING THE SAME

A semiconductor device includes a first coalescent layer, a second coalescent layer, a nitride stacked structure on the second coalescent layer, and a third layer between the first and second coalescent layers. The first coalescent layer includes a plurality of formations that are partially merged,...

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Bibliographic Details
Main Authors KIM JOO-SUNG, TAK YOUNG-JO, KIM JUN-YOUN
Format Patent
LanguageEnglish
Published 13.02.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first coalescent layer, a second coalescent layer, a nitride stacked structure on the second coalescent layer, and a third layer between the first and second coalescent layers. The first coalescent layer includes a plurality of formations that are partially merged, and the third layer is disposed on the formations to allow a first type of stress to be generated in an area which includes the first coalescent layer and a second type of stress to be generated in an area which includes the second coalescent layer.
Bibliography:Application Number: US201313839693