PATTERN FORMING METHOD

According to one embodiment, a pattern forming method includes forming a physical guide that includes a first predetermined pattern in a first region on a lower layer film, and includes a second predetermined pattern and a dummy pattern in a second region on the lower layer film, forming a block pol...

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Bibliographic Details
Main Authors YONEMITSU HIROKI, SEINO YURIKO, KATO HIROKAZU
Format Patent
LanguageEnglish
Published 23.01.2014
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Summary:According to one embodiment, a pattern forming method includes forming a physical guide that includes a first predetermined pattern in a first region on a lower layer film, and includes a second predetermined pattern and a dummy pattern in a second region on the lower layer film, forming a block polymer inside the physical guide, making the block polymer microphase-separated to form a pattern having a first polymer section and a second polymer section, removing the second polymer section to form a hole pattern, and processing the lower layer film after removal of the second polymer section, with the physical guide and the first polymer section used as a mask. Shapes of the hole patterns in the first and the second predetermined patterns are transferred to the lower layer film. A shape of the hole pattern in the dummy pattern is not transferred to the lower layer film.
Bibliography:Application Number: US201313754153