METHODS OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE

A method of manufacturing a phase change memory device includes forming a lower electrode in a cell region of a substrate and a transistor in a peripheral circuit region of the substrate. A first insulating interlayer is formed on the substrate and covers the lower electrode and the transistor. A fi...

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Bibliographic Details
Main Author EUN SEONG-HO
Format Patent
LanguageEnglish
Published 02.01.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a phase change memory device includes forming a lower electrode in a cell region of a substrate and a transistor in a peripheral circuit region of the substrate. A first insulating interlayer is formed on the substrate and covers the lower electrode and the transistor. A first contact is formed to penetrate through the first insulating interlayer to connect with the transistor. A second insulating interlayer is formed on the first insulating interlayer and the first contact. A first opening and a second opening are formed by partially removing the first and second insulating interlayers. A phase change material layer pattern is formed to partially fill the first opening. A bit line is formed to fill a remaining portion of the first opening, and a wiring is formed to fill the second opening. Accordingly, the manufacturing process may be simplified.
Bibliography:Application Number: US201313904665