INTEGRATED CIRCUIT DEVICE FEATURING AN ANTIFUSE AND METHOD OF MAKING SAME

• Main Authors: ZHU JOHN J, WANG ZHONGZE, LI XIA
• Format: Patent
• Language: English
• Published: 02.01.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

One feature pertains to an integrated circuit, comprising an access transistor and an antifuse. The access transistor includes at least one source/drain region, and the antifuse has a conductor-insulator-conductor structure. The antifuse includes a first conductor that acts as a first electrode, and also includes an antifuse dielectric, and a second conductor. A first surface of the first electrode is coupled to a first surface of the antifuse dielectric, a second surface of the antifuse dielectric is coupled to a first surface of the second conductor. The second conductor is electrically coupled to the access transistor's source/drain region. The antifuse is adapted to transition from an open circuit state to a closed circuit state if a programming voltage Vpp greater than or equal to an antifuse dielectric breakdown voltage is applied between the first electrode and the second conductor.