METHOD FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM

The invention provides a method for forming a silicon-containing resist underlayer film, the method for coating and forming a silicon-containing resist underlayer film by spin coating method comprising: feeding an aqueous alkaline solution in a pipe of an apparatus for coating and forming a film by...

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Bibliographic Details
Main Authors IWABUCHI MOTOAKI, YOSHIHARA TAKAO, OGIHARA TSUTOMU
Format Patent
LanguageEnglish
Published 19.12.2013
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:The invention provides a method for forming a silicon-containing resist underlayer film, the method for coating and forming a silicon-containing resist underlayer film by spin coating method comprising: feeding an aqueous alkaline solution in a pipe of an apparatus for coating and forming a film by spin coating method to clean therein; supplying a silicon-containing resist underlayer film composition via the pipe; and coating the silicon-containing resist underlayer film on a substrate to form a film. There can be provided a method for forming a silicon-containing resist underlayer film capable of reducing coating defects after forming a film by cleaning and removing a precipitate derived from silicon-containing resist underlayer film composition that precipitates and adheres in a pipe of an apparatus for coating and forming a film.
Bibliography:Application Number: US201313895957