MAGNETO-RESISTIVE MEMORY DEVICE INCLUDING SOURCE LINE VOLTAGE GENERATOR
A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
12.12.2013
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Subjects | |
Online Access | Get full text |
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Summary: | A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line. |
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Bibliography: | Application Number: US201313832101 |