MAGNETO-RESISTIVE MEMORY DEVICE INCLUDING SOURCE LINE VOLTAGE GENERATOR

A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage...

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Bibliographic Details
Main Authors LEE KYUAN, KIM DONG-MIN, KIM HYE-JIN, KANG SANG-KYU, SOHN DONG-HYUN
Format Patent
LanguageEnglish
Published 12.12.2013
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.
Bibliography:Application Number: US201313832101