SENSE AMPLIFIER CIRCUITRY FOR RESISTIVE TYPE MEMORY

• Main Authors: CHA SOOHO, ONG ADRIAN E, KIM CHAN-KYUNG, YOUN YONGSIK
• Format: Patent
• Language: English
• Published: 05.12.2013
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

Example embodiments include a resistive type memory current sense amplifier circuit including differential output terminals, first and second input terminals, pre-charge transistors, and current modulating transistors coupled directly to the pre-charge transistors. The pre-charge configuration provides high peak currents to charge the bit line and reference line during a "ready" or "pre-charge" stage of operation of the current sense amplifier circuit. The current modulating transistors are configured to operate in a saturation region mode during at least a "set" or "amplification" stage. The current modulating transistors continuously average a bit line current and a reference line current during the "set" or "amplification" stage, thereby improving noise immunity of the circuit. During a "go" or "latch" stage of operation, a logical value "0" or "1" is latched at the differential output terminals based on positive feedback of a latch circuit.