ROTATIONAL ABSORPTION SPECTRA FOR SEMICONDUCTOR MANUFACTURING PROCESS MONITORING AND CONTROL

Methods and apparatus for semiconductor manufacturing process monitoring and control are provided herein. In some embodiments, apparatus for substrate processing may include a process chamber for processing a substrate in an inner volume of the process chamber; a radiation source disposed outside of...

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Bibliographic Details
Main Authors SUI ZHIFENG, STOUT PHILLIP, LIAN LEI, ARMACOST MICHAEL D, PATZ RYAN
Format Patent
LanguageEnglish
Published 21.11.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods and apparatus for semiconductor manufacturing process monitoring and control are provided herein. In some embodiments, apparatus for substrate processing may include a process chamber for processing a substrate in an inner volume of the process chamber; a radiation source disposed outside of the process chamber to provide radiation at a frequency of about 200 GHz to about 2 THz into the inner volume via a dielectric window in a wall of the vacuum process chamber; a detector to detect the signal after having passed through the inner volume; and a controller coupled to the detector and configured to determine the composition of species within the inner volume based upon the detected signal.
Bibliography:Application Number: US201313868318