METHODS FOR FABRICATING DUAL DAMASCENE INTERCONNECT STRUCTURES

Methods for fabricating dual damascene interconnect structures are provided herein. In some embodiments, a method for fabricating a dual damascene interconnect structure may include etching a via into a substrate through a first photoresist layer; patterning a second photoresist layer atop the subst...

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Bibliographic Details
Main Authors YALAMANCHILI MADHAVA RAO, SIRAJUDDIN KHALID M, EATON BRAD, VIJAYEN JAYAGATAN R, MISHRA ROHIT
Format Patent
LanguageEnglish
Published 31.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods for fabricating dual damascene interconnect structures are provided herein. In some embodiments, a method for fabricating a dual damascene interconnect structure may include etching a via into a substrate through a first photoresist layer; patterning a second photoresist layer atop the substrate to define a trench pattern, wherein the via is aligned within the trench pattern, and wherein a portion of undeveloped photoresist remains in the via after patterning; and etching the trench into the substrate to form a dual damascene pattern in the substrate.
Bibliography:Application Number: US201213458172