METHOD OF FORMING A FINFET DEVICE

A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second...

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Main Authors MUI CHIANG, CHEN HUA FENG, LIU CHIAU, CHEN RYAN CHIA-JEN, CHEN KUEI-SHUN, CHEN CHAONG, PENG CHIH-HSIUNG, CHANG CHI-KANG, CHANG SHENG-YU
Format Patent
LanguageEnglish
Published 17.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second opening in the substrate in a second longitudinal direction. The first and second longitudinal directions are different. The method further includes depositing a filling material in the first and second openings.
Bibliography:Application Number: US201213449118