Methods for Achieving Width Control in Etching Processes

A method includes performing a patterning step on a layer using a process gas. When the patterning step is performed, a signal strength is monitored, wherein the signal strength is from an emission spectrum of a compound generated from the patterning step. The compound includes an element in the pat...

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Bibliographic Details
Main Authors LIAO KENG-YING, YANG SZU-HUNG, HSU CHIUNG WEN
Format Patent
LanguageEnglish
Published 26.09.2013
Subjects
APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL
APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPRAYING OR ATOMISING IN GENERAL
TRANSPORTING
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Summary:A method includes performing a patterning step on a layer using a process gas. When the patterning step is performed, a signal strength is monitored, wherein the signal strength is from an emission spectrum of a compound generated from the patterning step. The compound includes an element in the patterned layer. At a time the signal strength is reduced to a pre-determined threshold value, the patterning step is stopped.
Bibliography:Application Number: US201213428925