REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE

In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gat...

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Main Authors GUO DECHAO, WONG KEITH KWONG HON, WANG YANFENG, PEI CHENGWEN, YUAN JUN, WANG GAN, YU JIAN, KNARR RANDOLPH F, LI ZHENGWEN
Format Patent
LanguageEnglish
Published 11.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
Bibliography:Application Number: US201313780877