Silicon Carbide Schottky Diode Device with Mesa Termination and Manufacturing Method Thereof

• Main Authors: HUANG HAON, WANG HUI-HSUAN, LIU CHEE-WEE
• Format: Patent
• Language: English
• Published: 04.07.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A silicon carbide Schottky diode device with mesa terminations and the manufacturing method thereof are provided. The silicon carbide Schottky diode device includes an n-type epitaxial silicon carbide layer with mesa terminations on an n-type silicon carbide substrate, two p-type regions in the n-ty...