Silicon Carbide Schottky Diode Device with Mesa Termination and Manufacturing Method Thereof

A silicon carbide Schottky diode device with mesa terminations and the manufacturing method thereof are provided. The silicon carbide Schottky diode device includes an n-type epitaxial silicon carbide layer with mesa terminations on an n-type silicon carbide substrate, two p-type regions in the n-ty...

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Bibliographic Details
Main Authors HUANG HAON, WANG HUI-HSUAN, LIU CHEE-WEE
Format Patent
LanguageEnglish
Published 04.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silicon carbide Schottky diode device with mesa terminations and the manufacturing method thereof are provided. The silicon carbide Schottky diode device includes an n-type epitaxial silicon carbide layer with mesa terminations on an n-type silicon carbide substrate, two p-type regions in the n-type epitaxial silicon carbide layer and a Schottky metal contact on the n-type epitaxial silicon carbide layer and the p-type regions, a dielectric layer on sidewalls and planes of the mesa terminations.
Bibliography:Application Number: US201213458926