Doped Tantalum Nitride for Copper Barrier Applications

Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN...

Full description

Saved in:
Bibliographic Details
Main Authors MA PAUL F, CHANG MEI, LAKSHMANAN ANNAMALAI, SHAN JENNIFER
Format Patent
LanguageEnglish
Published 06.06.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.
Bibliography:Application Number: US201213689871