NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

• Main Authors: OOTA SHIGETO, TANAKA HIROYASU, FUJIWARA TOMOKO, KITO MASARU, FUKUZUMI YOSHIAKI, MATSUNAMI JUNYA, KIRISAWA RYOUHEI, KIDOH MASARU, KATSUMATA RYOTA, MIKAJIRI YOSHIMASA, ISHIDUKI MEGUMI, KOMORI YOSUKE, AOCHI HIDEAKI
• Format: Patent
• Language: English
• Published: 16.05.2013
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

A nonvolatile semiconductor memory device includes a memory unit and a control unit. The memory unit includes a multilayer structure including electrode films and inter-electrode insulating films alternately stacked in a first direction; a semiconductor pillar piercing the multilayer structure in the first direction; a memory layer provided between the semiconductor pillar and the electrode films; an inner insulating film provided between the memory layer and the semiconductor pillar; an outer insulating film provided between the memory layer and the electrode films; and a wiring electrically connected to the first semiconductor pillar. In an erasing operation, the control unit sets the first wiring at a first potential and sets the electrode film at a second potential lower than the first potential, and then sets the first wiring at a third potential and sets the electrode film at a fourth potential higher than the third potential.