DBR Laser Diode With Symmetric Aperiodically Shifted Grating Phase

• Main Authors: PIKULA DRAGAN, KUKSENKOV DMITRI VLADISLAVOVICH, ROUSSEV ROSTISLAV VATCHEV
• Format: Patent
• Language: English
• Published: 09.05.2013
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

In accordance with one embodiment of the present disclosure, a DBR laser diode is provided where the wavelength selective grating of the laser diode is characterized by an aperiodically shifted grating phase phi and a Bragg wavelength lambdaB. The aperiodically shifted grating phase phi is substantially symmetric or substantially pi-shifted symmetric relative to a midpoint CL or shifted midpoint CL* of the DBR section. The phase phi of the wavelength selective grating is characterized by aperiodic phase jumps of magnitude phiJ1, J2, . . . and segment lengths l0, 1, . . . . The phase jumps of the wavelength selective grating are arranged substantially symmetrically about a midpoint CL or shifted midpoint CL* of the DBR section along the optical axis of the DBR laser diode. At least two phase jumps reside on each side of the midpoint CL or shifted midpoint CL* of the DBR section.