DBR Laser Diode With Symmetric Aperiodically Shifted Grating Phase
In accordance with one embodiment of the present disclosure, a DBR laser diode is provided where the wavelength selective grating of the laser diode is characterized by an aperiodically shifted grating phase phi and a Bragg wavelength lambdaB. The aperiodically shifted grating phase phi is substanti...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
09.05.2013
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Subjects | |
Online Access | Get full text |
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Summary: | In accordance with one embodiment of the present disclosure, a DBR laser diode is provided where the wavelength selective grating of the laser diode is characterized by an aperiodically shifted grating phase phi and a Bragg wavelength lambdaB. The aperiodically shifted grating phase phi is substantially symmetric or substantially pi-shifted symmetric relative to a midpoint CL or shifted midpoint CL* of the DBR section. The phase phi of the wavelength selective grating is characterized by aperiodic phase jumps of magnitude phiJ1, J2, . . . and segment lengths l0, 1, . . . . The phase jumps of the wavelength selective grating are arranged substantially symmetrically about a midpoint CL or shifted midpoint CL* of the DBR section along the optical axis of the DBR laser diode. At least two phase jumps reside on each side of the midpoint CL or shifted midpoint CL* of the DBR section. |
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Bibliography: | Application Number: US201113292433 |