Graphite Crucible for Silicone Crystal Production and Method of Ingot Removal
A graphite crucible for processing silicon includes a bottom wall including a bottom wall interior facing surface. A plurality of side walls extend upwardly from the bottom wall, each side wall including a side wall interior facing surface. A contact point is provided on the side wall to prevent upw...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
09.05.2013
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Subjects | |
Online Access | Get full text |
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Summary: | A graphite crucible for processing silicon includes a bottom wall including a bottom wall interior facing surface. A plurality of side walls extend upwardly from the bottom wall, each side wall including a side wall interior facing surface. A contact point is provided on the side wall to prevent upward movement of the crucible during ingot removal. The side walls have a coefficient of thermal expansion perpendicular to the solidification direction that is less than 95% of the coefficient of thermal expansion of the silicon processed therein. Also, the side walls and the bottom wall have a thru-plane thermal conductivity from about 90 to about 160 W/m·K at room temperature. |
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Bibliography: | Application Number: US201213670962 |