Graphite Crucible for Silicone Crystal Production and Method of Ingot Removal

A graphite crucible for processing silicon includes a bottom wall including a bottom wall interior facing surface. A plurality of side walls extend upwardly from the bottom wall, each side wall including a side wall interior facing surface. A contact point is provided on the side wall to prevent upw...

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Bibliographic Details
Main Authors SHIVES GARY DALE, KRUSS OLIVER, SUBRAMANIAN PRASHANTH, REYNOLDS, III ROBERT ANDERSON, ELLIOTT RYAN CHRISTOPHER, FRANCIS ANDREW JUSTIN
Format Patent
LanguageEnglish
Published 09.05.2013
Subjects
CASTING
CASTING OF METALS
CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
HAULING
HOISTING
HOISTING, LIFTING, HAULING OR PUSHING, NOT OTHERWISE PROVIDEDFOR, e.g. DEVICES WHICH APPLY A LIFTING OR PUSHING FORCEDIRECTLY TO THE SURFACE OF A LOAD
LIFTING
PERFORMING OPERATIONS
POWDER METALLURGY
TRANSPORTING
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Summary:A graphite crucible for processing silicon includes a bottom wall including a bottom wall interior facing surface. A plurality of side walls extend upwardly from the bottom wall, each side wall including a side wall interior facing surface. A contact point is provided on the side wall to prevent upward movement of the crucible during ingot removal. The side walls have a coefficient of thermal expansion perpendicular to the solidification direction that is less than 95% of the coefficient of thermal expansion of the silicon processed therein. Also, the side walls and the bottom wall have a thru-plane thermal conductivity from about 90 to about 160 W/m·K at room temperature.
Bibliography:Application Number: US201213670962