NONVOLATILE STORAGE DEVICE

A nonvolatile storage device includes a tunnel insulating film disposed on a surface of a semiconductor substrate and a charge trap layer disposed in contact with an upper surface of the tunnel insulating film. The charge trap layer includes a second charge trap film disposed in contact with the upp...

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Bibliographic Details
Main Author FUJII MOTOKI
Format Patent
LanguageEnglish
Published 18.04.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A nonvolatile storage device includes a tunnel insulating film disposed on a surface of a semiconductor substrate and a charge trap layer disposed in contact with an upper surface of the tunnel insulating film. The charge trap layer includes a second charge trap film disposed in contact with the upper surface of the tunnel insulating film and a first charge trap film disposed in contact with an upper surface of the second charge trap film.
Bibliography:Application Number: US201213612223