MONOLITHIC InGaN SOLAR CELL POWER GENERATION WITH INTEGRATED EFFICIENT SWITCHING DC-DC VOLTAGE CONVERTOR

A single monolithic integrated circuit (10) containing a solar cell (or cells) with a DC-DC converter includes: a substrate (120, 220); the solar cell (101) or a solar cell array (100, 100′) on the substrate for generating an output voltage; and the DC-DC converter (102) integrated on the substrate...

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Bibliographic Details
Main Author SAUNDERS JEFFREY H
Format Patent
LanguageEnglish
Published 28.03.2013
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Summary:A single monolithic integrated circuit (10) containing a solar cell (or cells) with a DC-DC converter includes: a substrate (120, 220); the solar cell (101) or a solar cell array (100, 100′) on the substrate for generating an output voltage; and the DC-DC converter (102) integrated on the substrate for receiving the output voltage to generate a converted voltage, which may be higher or lower than the solar generated voltage. The substrate may be a silicon , silicon carbide, or sapphire substrate. A GaN RF power amplifier and a CMOS controller including PWM modulator may also be monolithically integrated with an InGaN solar cell array and a GaN DC-DC converter. GaN switches (113, 115, 117, 119) may be used to couple InGaN solar cells (101) in series or parallel within the solar cell array (100, 100′) to yield improved or optimal voltage and current levels as required by the load.
Bibliography:Application Number: US201113240991