Apparatus and Methods for Low K Dielectric Layers

Methods and apparatus for a low k dielectric layer of porous SiCOH. A method includes placing a semiconductor substrate into a vapor deposition chamber; introducing reactive gases into the vapor deposition chamber to form a dielectric film comprising SiCOH and a decomposable porogen; depositing the...

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Bibliographic Details
Main Authors PENG YU-YUN, LIOU JOUNG-WEI, YANG HUIUN, LIN KENGU
Format Patent
LanguageEnglish
Published 21.03.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods and apparatus for a low k dielectric layer of porous SiCOH. A method includes placing a semiconductor substrate into a vapor deposition chamber; introducing reactive gases into the vapor deposition chamber to form a dielectric film comprising SiCOH and a decomposable porogen; depositing the dielectric film to have a ratio of Si-CH3 to SiOnetwork bonds of less than or equal to 0.25; and performing a cure for a cure time to remove substantially all of the porogen from the dielectric film. In one embodiment the porogen comprises a cyclic hydrocarbon. The porogen may be UV curable. In embodiments, different lowered Si-CH3 to SiOnetwork ratios for the deposition of the dielectric film are disclosed. An apparatus of a semiconductor device including the low k dielectric layers is disclosed.
Bibliography:Application Number: US201113234946