NON-PLANAR SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

A non-planar semiconductor structure includes a substrate, at least two fin-shaped structures, at least an isolation structure, and a plurality of epitaxial layers. The fin-shaped structures are located on the substrate. The isolation structure is located between the fin-shaped structures, and the i...

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Main Authors CHIEN CHINNG, TSAI TENGUN, LIN CHIEN-TING, TSAI SHIH-HUNG, WU CHUN-YUAN, LIN CHIN-FU, LIU CHIHIEN
Format Patent
LanguageEnglish
Published 07.03.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A non-planar semiconductor structure includes a substrate, at least two fin-shaped structures, at least an isolation structure, and a plurality of epitaxial layers. The fin-shaped structures are located on the substrate. The isolation structure is located between the fin-shaped structures, and the isolation structure has a nitrogen-containing layer. The epitaxial layers respectively cover a part of the fin-shaped structures and are located on the nitrogen-containing layer. A non-planar semiconductor process is also provided for forming the semiconductor structure.
Bibliography:Application Number: US201113224344