COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY

• Main Authors: SCHOLZ WERNER, CLINTON THOMAS WILLIAM
• Format: Patent
• Language: English
• Published: 28.02.2013
• Subjects: GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INFORMATION STORAGE; PHYSICS; STATIC STORES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.