SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF SEMICONDUCTOR SUBSTRATE

Silicidation techniques with improved rare earth silicide morphology for fabrication of semiconductor device contacts. For example, a method for forming silicide includes implanting a silicon layer with an amorphizing species to form an amorphous silicon region in the silicon layer and depositing a...

Full description

Saved in:
Bibliographic Details
Main Authors SCERBO CHRISTOPHER, MURRAY CONAL E, BESSER PAUL R, OHUCHI KAZUYA, LAVOIE CHRISTIAN, YANG BIN, D'EMIC CHRISTOPHER P, CARRUTHERS ROY A
Format Patent
LanguageEnglish
Published 28.02.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Silicidation techniques with improved rare earth silicide morphology for fabrication of semiconductor device contacts. For example, a method for forming silicide includes implanting a silicon layer with an amorphizing species to form an amorphous silicon region in the silicon layer and depositing a rare earth metal film on the silicon layer in contact with the amorphous silicon region. A suicide process is then performed to combine the rare earth metal film and the amorphous silicon region to form a silicide film on the silicon layer.
Bibliography:Application Number: US201113222469