COMBINED PLANAR FET AND FIN-FET DEVICES AND METHODS
Electronic devices (20, 20′) of superior design flexibility that avoid channel-width quantization effects common with prior art fin-type (FIN) field effect transistors (FIN-FETS) (22) are obtained by providing multiple FIN-FETs (22) and at least one planar FET (32, 32′) on a common substrate (21), w...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
28.02.2013
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Subjects | |
Online Access | Get full text |
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