COMBINED PLANAR FET AND FIN-FET DEVICES AND METHODS

Electronic devices (20, 20′) of superior design flexibility that avoid channel-width quantization effects common with prior art fin-type (FIN) field effect transistors (FIN-FETS) (22) are obtained by providing multiple FIN-FETs (22) and at least one planar FET (32, 32′) on a common substrate (21), w...

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Bibliographic Details
Main Authors MAITRA KINGSUK, WAHL JEREMY A
Format Patent
LanguageEnglish
Published 28.02.2013
Subjects
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