SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

A method of manufacturing a transistor of a semiconductor device, the method including forming a gate pattern on a semiconductor substrate, forming a spacer on a sidewall of the gate pattern, wet etching the semiconductor substrate to form a first recess in the semiconductor substrate, wherein the f...

Full description

Saved in:
Bibliographic Details
Main Authors JOE JINYEONG, LEE BYEONGCHAN, KOH CHUNG GEUN, KIM SEOKHOON, KIM SANGSU, LEE SUNGHIL
Format Patent
LanguageEnglish
Published 21.02.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method of manufacturing a transistor of a semiconductor device, the method including forming a gate pattern on a semiconductor substrate, forming a spacer on a sidewall of the gate pattern, wet etching the semiconductor substrate to form a first recess in the semiconductor substrate, wherein the first recess is adjacent to the spacer, and wet etching the first recess to form a second recess in the semiconductor substrate.
Bibliography:Application Number: US201213562826