METHOD AND APPARATUS INCLUDING IMPROVED VERTICAL-CAVITY SURFACE-EMITTING LASERS

VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL...

Full description

Saved in:
Bibliographic Details
Main Authors DUMMER MATTHEW M, HIBBS-BRENNER MARY K, JOHNSON KLEIN L
Format Patent
LanguageEnglish
Published 07.02.2013
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.
Bibliography:Application Number: US201213559821