COAXIAL SOLDER BUMP SUPPORT STRUCTURE

A solder bump support structure and method of manufacturing thereof is provided. The solder bump support structure includes an inter-level dielectric (ILD) layer formed over a silicon substrate. The ILD layer has a plurality of conductive vias. The structure further includes a first insulation layer...

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Bibliographic Details
Main Authors MELVILLE IAN D, MISRA EKTA, ERWIN BRIAN MICHAEL, SCOTT GEORGE JOHN
Format Patent
LanguageEnglish
Published 31.01.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A solder bump support structure and method of manufacturing thereof is provided. The solder bump support structure includes an inter-level dielectric (ILD) layer formed over a silicon substrate. The ILD layer has a plurality of conductive vias. The structure further includes a first insulation layer formed on the ILD layer. The solder bump support structure further includes a pedestal member formed on the ILD layer which includes a conductive material formed above the plurality of conductive vias in the ILD layer coaxially surrounded by a second insulation layer. The second insulation layer is thicker than the first insulation layer. The structure further includes a capping under bump metal (UBM) layer formed over, and in electrical contact with, the conductive material and formed over at least a portion of the second insulation layer of the pedestal member.
Bibliography:Application Number: US201113194616