STRUCTURE AND METHOD FOR SINGLE GATE NON-VOLATILE MEMORY DEVICE

The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate having a periphery region and a memory region; a field effect transistor disposed in the periphery region and having silicide features; and a single floating gate non-volatile memory devi...

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Bibliographic Details
Main Authors TSENG HUANG-WEN, TSUI YING-KIT
Format Patent
LanguageEnglish
Published 24.01.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate having a periphery region and a memory region; a field effect transistor disposed in the periphery region and having silicide features; and a single floating gate non-volatile memory device disposed in the memory region, free of silicide and having a first gate electrode and a second gate electrode laterally spaced from each other.
Bibliography:Application Number: US201113184823