METHOD AND DEVICE FOR LAYER DEPOSITION
Method for depositing a layer on a surface of a substrate. The method comprises injecting a precursor gas from a precursor supply into a deposition cavity for contacting the substrate surface, draining part of the injected precursor gas from the deposition cavity, and positioning the deposition cavi...
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Format | Patent |
Language | English |
Published |
10.01.2013
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Abstract | Method for depositing a layer on a surface of a substrate. The method comprises injecting a precursor gas from a precursor supply into a deposition cavity for contacting the substrate surface, draining part of the injected precursor gas from the deposition cavity, and positioning the deposition cavity and the substrate relative to each other along a plane of the substrate surface. The method further comprising providing a first electrode and a second electrode, positioning the first electrode and the substrate relative to each other, and generating a plasma discharge near the substrate for contacting the substrate by generating a high-voltage difference between the first electrode and the second electrode. The method comprises generating the plasma discharge selectively, for patterning the surface by means of the plasma. A portion of the substrate contacted by the precursor gas selectively overlaps with a portion of the substrate contacted by the plasma. |
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AbstractList | Method for depositing a layer on a surface of a substrate. The method comprises injecting a precursor gas from a precursor supply into a deposition cavity for contacting the substrate surface, draining part of the injected precursor gas from the deposition cavity, and positioning the deposition cavity and the substrate relative to each other along a plane of the substrate surface. The method further comprising providing a first electrode and a second electrode, positioning the first electrode and the substrate relative to each other, and generating a plasma discharge near the substrate for contacting the substrate by generating a high-voltage difference between the first electrode and the second electrode. The method comprises generating the plasma discharge selectively, for patterning the surface by means of the plasma. A portion of the substrate contacted by the precursor gas selectively overlaps with a portion of the substrate contacted by the plasma. |
Author | DE HAAN HUGO ANTON MARIE VERMEER ADRIANUS JOHANNES PETRUS MARIA |
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RelatedCompanies | VISION DYNAMICS HOLDING B.V DE HAAN HUGO ANTON MARIE ONDERZOEK TNO NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK VERMEER ADRIANUS JOHANNES PETRUS MARIA |
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Snippet | Method for depositing a layer on a surface of a substrate. The method comprises injecting a precursor gas from a precursor supply into a deposition cavity for... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | METHOD AND DEVICE FOR LAYER DEPOSITION |
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