METHOD AND DEVICE FOR LAYER DEPOSITION
Method for depositing a layer on a surface of a substrate. The method comprises injecting a precursor gas from a precursor supply into a deposition cavity for contacting the substrate surface, draining part of the injected precursor gas from the deposition cavity, and positioning the deposition cavi...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
10.01.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Method for depositing a layer on a surface of a substrate. The method comprises injecting a precursor gas from a precursor supply into a deposition cavity for contacting the substrate surface, draining part of the injected precursor gas from the deposition cavity, and positioning the deposition cavity and the substrate relative to each other along a plane of the substrate surface. The method further comprising providing a first electrode and a second electrode, positioning the first electrode and the substrate relative to each other, and generating a plasma discharge near the substrate for contacting the substrate by generating a high-voltage difference between the first electrode and the second electrode. The method comprises generating the plasma discharge selectively, for patterning the surface by means of the plasma. A portion of the substrate contacted by the precursor gas selectively overlaps with a portion of the substrate contacted by the plasma. |
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Bibliography: | Application Number: US201113579765 |