WAFER TREATMENT METHOD AND FABRICATING METHOD OF MOS TRANSISTOR

A wafer treatment method includes the following steps. A wafer is provided, wherein the wafer includes a substrate, a first oxide layer located on a front side of the substrate and a second oxide layer located on a back side of the substrate. An etching process is performed to entirely remove the fi...

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Bibliographic Details
Main Authors CHEN JUNGING, HUANG RUEI-HAO
Format Patent
LanguageEnglish
Published 27.12.2012
Subjects
BASIC ELECTRIC ELEMENTS
DECORATIVE ARTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MOSAICS
PAPERHANGING
PERFORMING OPERATIONS
PRODUCING DECORATIVE EFFECTS
SEMICONDUCTOR DEVICES
TARSIA WORK
TRANSPORTING
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Summary:A wafer treatment method includes the following steps. A wafer is provided, wherein the wafer includes a substrate, a first oxide layer located on a front side of the substrate and a second oxide layer located on a back side of the substrate. An etching process is performed to entirely remove the first oxide layer. A fabricating method of a MOS transistor applying the wafer treatment method is also provided.
Bibliography:Application Number: US201113169032