LOW VOLTAGE PROGRAMMABLE MOSFET ANTIFUSE WITH BODY CONTACT FOR DIFFUSION HEATING

An antifuse can include an insulated gate field effect transistor (IGFET) having an active semiconductor region including a body and first regions, i.e., at least one source region and at least one drain region separated from one another by the body. A gate may overlie the body and a body contact is...

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Bibliographic Details
Main Author LI YAN ZUN
Format Patent
LanguageEnglish
Published 13.12.2012
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:An antifuse can include an insulated gate field effect transistor (IGFET) having an active semiconductor region including a body and first regions, i.e., at least one source region and at least one drain region separated from one another by the body. A gate may overlie the body and a body contact is electrically connected with the body. The first regions have opposite conductivity (i.e., n-type or p-type) from the body. The IGFET can be configured such that a programming current through at least one of the first regions and the body contact causes heating sufficient to drive dopant diffusion from the at least one first region into the body and cause an edge of the at least one first region to move closer to an adjacent edge of at least one other of the first regions. In such way, the programming current can permanently reduce electrical resistance by one or more orders of magnitude between the at least one first region and the at least one other first region.
Bibliography:Application Number: US201113158510