Semiconductor Devices Including Dual Gate Electrode Structures And Related Methods

A semiconductor device may include a semiconductor substrate with first and second spaced apart source/drain regions defining a channel region therebetween and a control gate structure on the channel region between the first and second spaced apart source/drain regions. More particularly, the contro...

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Main Authors CHOI SUNG-KWAN, JIN GYO-YOUNG, KIM JI-YOUNG, HWANG YOO-SANG, CHUNG HYUN-WOO, HONG HYEONG-SUN, OH YONGUL, WOO DONG-SOO
Format Patent
LanguageEnglish
Published 29.11.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device may include a semiconductor substrate with first and second spaced apart source/drain regions defining a channel region therebetween and a control gate structure on the channel region between the first and second spaced apart source/drain regions. More particularly, the control gate structure may include a first gate electrode on the channel region adjacent the first source/drain region, and a second gate electrode on the channel region adjacent the second source/drain region. Moreover, the first and second gate electrodes may be electrically isolated. Related devices, structures, methods of operation, and methods of fabrication are also discussed.
Bibliography:Application Number: US201113298644