SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bondi...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
29.11.2012
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Subjects | |
Online Access | Get full text |
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Summary: | There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced. |
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Bibliography: | Application Number: US201213480184 |