DEVICE FOR SINGLE-CRYSTAL GROWTH AND METHOD OF SINGLE-CRYSTAL GROWTH

• Main Authors: SHINDO ISAMU, ITO TOSHIMITSU, YANAGISAWA YUJI, TOMIOKA YASUHIDE, YANASE ATSUSHI
• Format: Patent
• Language: English
• Published: 29.11.2012
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

[Technical Problem] It is an object to provide a device for a single-crystal growth and a method of a single-crystal growth in which even when materials that are different in, for example, a melting point or a diameter are to be grown, the conditions for the stable growth of a single crystal can be obtained and a high-quality single crystal having a desired diameter can hence be grown. In addition, the device and the method have a reduced fluctuation of heating intensity to facilitate a crystal growth. [Solution of Problem] A device for a single-crystal growth is provided with a raw material rod (14) that is supported by an upper crystal driving shaft (8), a seed crystal rod (16) that is supported by a lower crystal driving shaft (12), and a heating means, and a contact part of the raw material rod (14) with the seed crystal rod (16) is heated with a heating means to form a melting zone (18) and grow a single crystal. The device is characterized in that the heating means is configured by a plurality of rectangular beams produced by lasers (2a, . . . 2e) which emit a laser light having the equivalent irradiation intensity and by an optical means, the heating means being disposed in a circumferential direction of the melting zone (18).