CMOS DEVICES INCORPORATING HYBRID ORIENTATION TECHNOLOGY (HOT) WITH EMBEDDED CONNECTORS

• Main Authors: CHEN XIAOMENG, KIM BYEONG Y, OTANI YOICHI
• Format: Patent
• Language: English
• Published: 22.11.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to complementary devices, such as n-FETs and p-FETs, which have hybrid channel orientations and are connected by conductive connectors that are embedded in a semiconductor substrate. Specifically, the semiconductor substrate has at least first and second device regions of different surface crystal orientations (i.e., hybrid orientations). An n-FET is formed at one of the first and second device regions, and a p-FET is formed at the other of the first and second device regions. The n-FET and the p-FET are electrically connected by a conductive connector that is located between the first and second device regions and embedded in the semiconductor substrate. Preferably, a dielectric spacer is first provided between the first and second device regions and recessed to form a gap therebetween. The conductive connector is then formed in the gap above the recessed dielectric spacer.