ION INJECTION SIMULATION METHOD, ION INJECTION SIMULATION DEVICE, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND METHOD OF DESIGNING SEMICONDUCTOR DEVICE

An ion injection simulation method includes: calculating a reinjection dose injected into a substrate and a structure formed on the substrate and reinjected from a side face of the structure; and calculating concentration distribution of impurities injected into the substrate from a distribution fun...

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Bibliographic Details
Main Author KOMACHI JUN
Format Patent
LanguageEnglish
Published 01.11.2012
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:An ion injection simulation method includes: calculating a reinjection dose injected into a substrate and a structure formed on the substrate and reinjected from a side face of the structure; and calculating concentration distribution of impurities injected into the substrate from a distribution function and reinjection conditions of the reinjection dose.
Bibliography:Application Number: US201213416462