EDDY CURRENT MONITORING OF METAL FEATURES

A method of chemical mechanical polishing a substrate includes polishing a plurality of discrete separated metal features of a layer on the substrate at a polishing station, using an eddy current monitoring system to monitor thickness of the metal features in the layer, and controlling pressures app...

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Bibliographic Details
Main Authors SWEDEK BOGUSLAW A, IRAVANI HASSAN G, TU WENIANG, SHEN SHIH-HAUR, GAGE DAVID MAXWELL, XU KUN, CARLSSON INGEMAR
Format Patent
LanguageEnglish
Published 01.11.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of chemical mechanical polishing a substrate includes polishing a plurality of discrete separated metal features of a layer on the substrate at a polishing station, using an eddy current monitoring system to monitor thickness of the metal features in the layer, and controlling pressures applied by a carrier head to the substrate during polishing of the layer at the polishing station based on thickness measurements of the metal features from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal feature and a target profile.
Bibliography:Application Number: US201113095819