Superjunction Structures for Power Devices and Methods of Manufacture

A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arrang...

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Main Authors YUN CHONGMAN, YEDINAK JOSEPH A, SHENOY PRAVEEN MURALEEDHARAN, LEE JAEGIL, REXER CHRISTOPHER L, YILMAZ HAMZA, HEIDENREICH HAROLD, PAN JAMES, RINEHIMER MARK L, REICHL DWAYNE S, RIDLEY, SR. RODNEY S
Format Patent
LanguageEnglish
Published 01.11.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.
Bibliography:Application Number: US201113095652