Superjunction Structures for Power Devices and Methods of Manufacture
A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arrang...
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Main Authors | , , , , , , , , , , |
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Format | Patent |
Language | English |
Published |
01.11.2012
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Subjects | |
Online Access | Get full text |
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Summary: | A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type. |
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Bibliography: | Application Number: US201113095690 |