HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE
A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.
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Main Authors | , , , , , , |
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Format | Patent |
Language | English |
Published |
01.11.2012
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Subjects | |
Online Access | Get full text |
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Summary: | A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio. |
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Bibliography: | Application Number: US201213459963 |