SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device comprises a trench isolation. The trench isolation is formed in a surface of a semiconductor substrate to define an active region a well region, and a bottom of the trench isolation is positioned within the well region. The trench isolation includes a conductive wiring electri...

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Bibliographic Details
Main Author OYU KIYONORI
Format Patent
LanguageEnglish
Published 18.10.2012
Subjects
ELECTRICITY
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Summary:A semiconductor device comprises a trench isolation. The trench isolation is formed in a surface of a semiconductor substrate to define an active region a well region, and a bottom of the trench isolation is positioned within the well region. The trench isolation includes a conductive wiring electrically connected to the well region and an insulating film which buries the conductive wiring in the bottom of the trench isolation. Semiconductor elements are disposed in the active region.
Bibliography:Application Number: US201213417806