Termination and Contact Structures for a High Voltage Gan-Based Heterojunction Transistor

• Main Authors: MURPHY MICHAEL, POPHRISTIC MILAN
• Format: Patent
• Language: English
• Published: 20.09.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises...