SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER

A semiconductor device includes a layer of semiconductor material having an active transistor region defined therein, an isolation trench formed in the semiconductor material adjacent the active transistor region, and a trench liner lining the isolation trench, wherein the trench liner is formed fro...

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Bibliographic Details
Main Authors CARTER RICHARD J, KLUTH GEORGE J, HARGROVE MICHAEL J
Format Patent
LanguageEnglish
Published 06.09.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a layer of semiconductor material having an active transistor region defined therein, an isolation trench formed in the semiconductor material adjacent the active transistor region, and a trench liner lining the isolation trench, wherein the trench liner is formed from a material that substantially inhibits formation of high-k material thereon, and wherein the isolation trench and the trench liner together form a lined trench. The device has an insulating material in the lined trench, and high-k gate material overlying at least a portion of the insulating material and overlying at least a portion of the active transistor region, such that the trench liner divides and separates the high-k gate material overlying the at least a portion of the insulating material from the high-k gate material overlying the at least a portion of the active transistor region.
Bibliography:Application Number: US201213473175