METHOD OF FORMING LAYOUT OF PHOTOMASK

A method of forming a layout of a photomask using optical proximity correction (OPC) includes: receiving a layout of a mask pattern; obtaining image parameters of a two-dimensional (2D) layout mask from a simulation; obtaining image parameters of a three-dimensional (3D) layout mask from a simulatio...

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Bibliographic Details
Main Authors CHOI SEONG-WOON, SER JUNG HOON, JEONG MOON-GYU
Format Patent
LanguageEnglish
Published 30.08.2012
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A method of forming a layout of a photomask using optical proximity correction (OPC) includes: receiving a layout of a mask pattern; obtaining image parameters of a two-dimensional (2D) layout mask from a simulation; obtaining image parameters of a three-dimensional (3D) layout mask from a simulation; obtaining differences between the image parameters of the 2D and 3D masks; and performing optical proximity correction (OPC) on the 2D mask to compensate for the differences between the image parameters of the 2D and 3D masks by using a visible kernel with respect to the 2D mask.
Bibliography:Application Number: US201113327379