Methods of Forming Semiconductor Devices
Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide...
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Main Authors | , , , , , , , , , |
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Format | Patent |
Language | English |
Published |
23.08.2012
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Abstract | Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process. |
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AbstractList | Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process. |
Author | NA HOONJOO PARK JUN-WOONG HYUN SANGJIN LEE HYE-LAN LEE HYOSAN CHOI SIYOUNG SEO KANG-ILL CHO HAGJU HONG HYUNG-SEOK SHIN YUGYUN |
Author_xml | – fullname: HYUN SANGJIN – fullname: LEE HYOSAN – fullname: CHOI SIYOUNG – fullname: SEO KANG-ILL – fullname: HONG HYUNG-SEOK – fullname: CHO HAGJU – fullname: NA HOONJOO – fullname: LEE HYE-LAN – fullname: PARK JUN-WOONG – fullname: SHIN YUGYUN |
BookMark | eNrjYmDJy89L5WTQ8E0tychPKVbIT1Nwyy_KzcxLVwhOzc1Mzs9LKU0uyS9ScEkty0xOLeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhkZGhiZGlmaOhsbEqQIAUQgq2A |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US2012214296A1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US2012214296A13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 12:32:42 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US2012214296A13 |
Notes | Application Number: US201213458418 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120823&DB=EPODOC&CC=US&NR=2012214296A1 |
ParticipantIDs | epo_espacenet_US2012214296A1 |
PublicationCentury | 2000 |
PublicationDate | 20120823 |
PublicationDateYYYYMMDD | 2012-08-23 |
PublicationDate_xml | – month: 08 year: 2012 text: 20120823 day: 23 |
PublicationDecade | 2010 |
PublicationYear | 2012 |
RelatedCompanies | NA HOONJOO PARK JUN-WOONG HYUN SANGJIN LEE HYE-LAN LEE HYOSAN CHOI SIYOUNG SEO KANG-ILL CHO HAGJU HONG HYUNG-SEOK SHIN YUGYUN |
RelatedCompanies_xml | – name: HONG HYUNG-SEOK – name: PARK JUN-WOONG – name: SEO KANG-ILL – name: HYUN SANGJIN – name: CHO HAGJU – name: LEE HYOSAN – name: CHOI SIYOUNG – name: SHIN YUGYUN – name: NA HOONJOO – name: LEE HYE-LAN |
Score | 2.865262 |
Snippet | Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Methods of Forming Semiconductor Devices |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120823&DB=EPODOC&locale=&CC=US&NR=2012214296A1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsQQd-W0O7KamAGsHXWCiMNO1TDZPBKZlA-MkYO5LNE0FDQ34-pl5hJp4RZhGMDHkwPbCgM8JLQcfjgjMUcnA_F4CLq8LEINYLuC1lcX6SZlAoXx7txBbFzVo79jQCDRxpObiZOsa4O_i76zm7GwbGqzmFwSWA50uZmnmCOwrsYIa0qCT9l3DnED7UgqQKxU3QQa2AKB5eSVCDEypecIMnM6wu9eEGTh8oVPeQCY09xWLMGj4gq97LlbIT1NwywctYklXCAYtbs_PA53aml-k4JIKzviiDMpuriHOHrpAK-PhPowPDUZ2n7EYAwuw758qwaCQnGxslGaYZJpsCVpQZ2lmaWEKbGCaJaWYGyZZJKVZSDLI4DNJCr-0NAMXiAsaIjUylmFgKSkqTZUF1rElSXLgoAEAAIp-KA |
link.rule.ids | 230,309,786,891,25594,76904 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsQQd-W0O7KamAGsHXWCiMNO1TDZPBKZlA-MkYO5LNE0FDQ34-pl5hJp4RZhGMDHkwPbCgM8JLQcfjgjMUcnA_F4CLq8LEINYLuC1lcX6SZlAoXx7txBbFzVo79jQCDRxpObiZOsa4O_i76zm7GwbGqzmFwSWA50uZmnmCOwrsZoDO4Wgk_Zdw5xA-1IKkCsVN0EGtgCgeXklQgxMqXnCDJzOsLvXhBk4fKFT3kAmNPcVizBo-IKvey5WyE9TcMsHLWJJVwgGLW7PzwOd2ppfpOCSCs74ogzKbq4hzh66QCvj4T6MDw1Gdp-xGAMLsO-fKsGgkJxsbJRmmGSabAlaUGdpZmlhCmxgmiWlmBsmWSSlWUgyyOAzSQq_tDwDp0eIr0-8j6eftzQDF0gKNFxqZCzDwFJSVJoqC6xvS5LkwMEEAAy2gRM |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Methods+of+Forming+Semiconductor+Devices&rft.inventor=HYUN+SANGJIN&rft.inventor=LEE+HYOSAN&rft.inventor=CHOI+SIYOUNG&rft.inventor=SEO+KANG-ILL&rft.inventor=HONG+HYUNG-SEOK&rft.inventor=CHO+HAGJU&rft.inventor=NA+HOONJOO&rft.inventor=LEE+HYE-LAN&rft.inventor=PARK+JUN-WOONG&rft.inventor=SHIN+YUGYUN&rft.date=2012-08-23&rft.externalDBID=A1&rft.externalDocID=US2012214296A1 |